Prognostics Approach For Power Mosfet Under Thermal-Stress Aging
The prognostic technique for a power MOSFET presented
in this paper is based on accelerated aging of MOSFET
IRF520Npbf in a TO-220 package. The methodology utilizes
thermal and power cycling to accelerate the life of the devices.
The major failure mechanism for the stress conditions is die attachment
degradation, …